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/* Abstract */
==Abstract==
HEMT (High Electron Mobility Transistor) is a field effect device with hetero interface acting as a channel. The name High electron mobility has come from its high electron mobility nature which is a result of potential well near the hetero interface. HEMT<nowiki>’</nowiki>s HEMTs mainly use III-V compound semiconductors as channel material. The main intention behind HEMT is to make use of the high mobility in logical applications instead of silicon. But later it was found that HEMT has very less noise figures which attracted communication sector and since it<nowiki>’</nowiki>s been used widely in the high frequency applications (radar, lte, satellites.Etc).
The scaling of silicon is coming to its scaling limitations, researchers again looking back at HEMT as a possible replacement for silicon. The fabrication methods of HEMT<nowiki>’</nowiki>s have also been simplified since its invention. Now the industry predictions state that HEMT will take over convention silicon transistors by 2015. With the potential well as a channel HEMT could achieve frequencies above 1THZ at low power.
